transient voltage suppressors for esd protection revision july 18, 2016 1 / 3 @ un semiconductor co., ltd. 2016 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. symbol parameter value units p pp peak pulse power (tp=8/20s waveform) 30 watts t j operating junction temperature range -40 to +125 oc t stg storage temperature range -55 to +150 oc i pp peak pulse current 2 a ? ultra small smd package:0201 ? ultra-low capacitance: <0.2 pf ? protects one bidirectional i/o line ? low clamping voltage ? working voltages : 5.0v ? low leakage current ? iec61000-4-2(esd): 15kv (air discharge) 15kv (contact discharge); ? usb 3.0 / usb 3.1 interfaces ? hdmi 1.4 / hdmi 2.0 interfaces ? video graphics cards ? notebooks, desktops, and servers ? portable instrumentation ? industrial controls ? peripherals ? jedec 0201/dfn0603 package ? molding compound flammability rating : ul 94v-o ? weight: 0.0004 grams(approx.). ? polarity: color band denotes cathode end. ? mounting position: any the ESD05V02D-ULC is ultra low capacitance tvs arrays designed to protect high speed data interfaces. this series has been specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from over-voltage caused by esd (electrostatic discharge), cde (cable discharge events), and eft (electrical fast transients). 0201/dfn0603
transient voltage suppressors for esd protection revision july 18, 2016 2 / 3 @ un semiconductor co., ltd. 2016 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. characteristics symbol test conditions min. typ. max. unit reverse working voltage v rwm -- -- -- 5.0 v reverse breakdown voltage v br i t =1ma 7.0 9.0 -- v reverse leakage current i r v rwm =5v t=25 c -- 1 50 na positive clamping voltage v c i pp =1a t p =8/20 s -- 11 -- v i pp =2a t p =8/20 s -- 14 -- junction capacitance c j vr = 0v, f = 1mhz -- -- 0.2 pf 60n s 10 % percent of peak pulse current % 30n s tr = 0.7~1ns time (ns) 90 % 100 % fig1. 8/20s pulse waveform fig2. esd pulse waveform (according to iec 61000-4-2) fig3. power rating derating curve fig4. capacitance between terminals characteristics power rating, (%) ambient temperature, ( c ) 0 20 40 60 80 100 120 25 50 75 100 0 125 mounting on glass epoxy pcbs 0.00 0.15 0.20 0 1 2 4 3 capacitance between terminals, ( pf) reverse voltage, (v) 0.25 f=1mhz ta=25c 5 0.05 0.10
transient voltage suppressors for esd protection revision july 18, 2016 3 / 3 @ un semiconductor co., ltd. 2016 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. 0201(dfn0603) size (mm) (inch) 0.006 0.16 0.2 0.3 0.00 0.013 0.0 0.016 e 0.6 0.025 b c d a suggested pad layout a b c d e 0201/dfn0603 0.006(0.1) 0.013(0.30) 0.011(0.25) 0.026(0.6) 0.022(0.5) 0.015(0.3) 0.011(0.2) 0.002(0.05) ref. 0.01(0.35) 0.01(0.365) 0.001(0.03) ref. 0.006(0.1) typ. 0.00(0.2) dimensions in inches and (millimeter) typ. typ.
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